Modulation-doped beta-(Al0.2Ga0.8)(2)O-3/Ga2O3 field-effect transistor

摘要

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the beta-(Al0.2Ga0.8)(2)O-3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)(2)O-3/Ga2O3 material system could enable heterojunction devices for high performance electronics. Published by AIP Publishing.